npn silicon planar medium power high gain transistor issue 3 ? january 1995 features * very low saturation voltage *high gain * 4 amp continuous current applications * dc-dc convertors * power management - supply switching absolute maximum ratings. parameter symbol ztx 1047a unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 5v peak pulse current i cm 20 a continuous collector current i c 4a base current i b 500 ma power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c ZTX1047A c b e e-line to92 compatible zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161-627 5105 (sales), (44)161-627 4963 (general enquiries) facsimile: (44)161-627 5467 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 87 modular avenue 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny11725 hing fong road, kwai fong major countries world-wide telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 ? zetex plc 1995 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service. transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 d=1(d.c) d=0.2 d=0.1 d=0.05 d=0.5 t1 tp d=t1 tp single pulse derating curve t -temperature (c) m a x p ower d i ssi p ati on - (wa tt s) -40 0.50 0.25 1.0 0.75 0 40 80 120 200 16 0 a mbi e nt tempe ratu re spice parameters *zetex ZTX1047A spice model last revision 20/01/95 * .model ZTX1047A npn is=9.73e-13 nf=1.0 bf=550 ikf=8.0 vaf=120 + ise=2.6e-13 ne=1.38 nr=1.0 br=400 ikr=5 var=15 + isc=8e-13 nc=1.4 rb=0.1 re=0.017 rc=0.010 + cjc=195.4e-12 cje=540.4e-12 mjc=0.257 mje=0.359 + vjc=0.390 vje=0.753 tf=450e-12 tr=1.2e-9 * ? 1995 zetex plc the copyright in this model and the design embodied belong to zetex plc (?zetex?). it is supplied free of charge by zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. all other rights are reserved. the model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by zetex plc, its distributors or agents. ZTX1047A
1ma 100 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 0.8 0.6 0.4 0.2 10ma 100ma 1a 10a 10v 1v 100 1 0.1 10 100a 100ma 1ma 10ma 100a 1a 10a 10a 1a 100a 10ma 1ma 100ma 10a 1a 100a 10ma 1ma 100ma 100ma 1ma 10ma 100a 1a 10a 1.4 1.2 1.2 1.0 typical characteristics i c -collector current i c -collector current i c -collector current i c -collector current v ce - collector voltage i c -collector current h fe v i c v be(sat) v ic v be(on) v i c v ce(sat) v i c v ce(sat) v i c safe operating area single pulse test tamb=25c +25c i c /i b =50 i c /i b =100 i c /i b =300 i c /i b =100 +100c +175c +25c -55c i c /i b =100 v ce =2v v ce =2v +25c +100c -55c +25c -55c +175c +100c dc 1s 100ms 10ms 1ms 100us +25c -55c +175c +100c 0.1v electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 35 55 v i c =100 m a collector-emitter breakdown voltage v ces 35 55 v ic=100 m a collector-emitter breakdown voltage v ceo 10 14 v ic=10ma collector-emitter breakdown voltage v cev 35 55 v ic=100 m a, v eb =1v emitter-base breakdown voltage v (br)ebo 5 8.7 v i e =100 m a collector cut-off current i cbo 0.3 10 na v cb =20v emitter cut-off current i ebo 0.3 10 na v eb =4v collector emitter cut-off current i ces 0.3 10 na vces=20v collector-emitter saturation voltage v ce(sat) 23 44 120 130 40 70 185 190 mv mv mv mv i c =0.5a, i b =10ma* i c =1a, i b =10ma* i c =3a, i b =10ma* i c =4a, i b =20ma* base-emitter saturation voltage v be(sat) 860 950 mv i c =4a, i b =20ma* base-emitter turn-on voltage v be(on) 810 900 mv ic=4a, v ce =2v* static forward current transfer ratio h fe 280 300 240 150 60 440 450 380 230 110 1200 i c =10ma, v ce =2v* i c =1a, v ce =2v* i c =4a, v ce =2v* i c =10a, v ce =2v* i c =20a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=50mhz output capacitance c obo 85 110 pf v cb =10v, f=1mhz switching times t on 130 ns i c =4a, i b =40ma, v cc =10v t off 180 ns i c =4a, i b = 40ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZTX1047A ZTX1047A
1ma 100 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 0.8 0.6 0.4 0.2 10ma 100ma 1a 10a 10v 1v 100 1 0.1 10 100a 100ma 1ma 10ma 100a 1a 10a 10a 1a 100a 10ma 1ma 100ma 10a 1a 100a 10ma 1ma 100ma 100ma 1ma 10ma 100a 1a 10a 1.4 1.2 1.2 1.0 typical characteristics i c -collector current i c -collector current i c -collector current i c -collector current v ce - collector voltage i c -collector current h fe v i c v be(sat) v ic v be(on) v i c v ce(sat) v i c v ce(sat) v i c safe operating area single pulse test tamb=25c +25c i c /i b =50 i c /i b =100 i c /i b =300 i c /i b =100 +100c +175c +25c -55c i c /i b =100 v ce =2v v ce =2v +25c +100c -55c +25c -55c +175c +100c dc 1s 100ms 10ms 1ms 100us +25c -55c +175c +100c 0.1v electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 35 55 v i c =100 m a collector-emitter breakdown voltage v ces 35 55 v ic=100 m a collector-emitter breakdown voltage v ceo 10 14 v ic=10ma collector-emitter breakdown voltage v cev 35 55 v ic=100 m a, v eb =1v emitter-base breakdown voltage v (br)ebo 5 8.7 v i e =100 m a collector cut-off current i cbo 0.3 10 na v cb =20v emitter cut-off current i ebo 0.3 10 na v eb =4v collector emitter cut-off current i ces 0.3 10 na vces=20v collector-emitter saturation voltage v ce(sat) 23 44 120 130 40 70 185 190 mv mv mv mv i c =0.5a, i b =10ma* i c =1a, i b =10ma* i c =3a, i b =10ma* i c =4a, i b =20ma* base-emitter saturation voltage v be(sat) 860 950 mv i c =4a, i b =20ma* base-emitter turn-on voltage v be(on) 810 900 mv ic=4a, v ce =2v* static forward current transfer ratio h fe 280 300 240 150 60 440 450 380 230 110 1200 i c =10ma, v ce =2v* i c =1a, v ce =2v* i c =4a, v ce =2v* i c =10a, v ce =2v* i c =20a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=50mhz output capacitance c obo 85 110 pf v cb =10v, f=1mhz switching times t on 130 ns i c =4a, i b =40ma, v cc =10v t off 180 ns i c =4a, i b = 40ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZTX1047A ZTX1047A
npn silicon planar medium power high gain transistor issue 3 ? january 1995 features * very low saturation voltage *high gain * 4 amp continuous current applications * dc-dc convertors * power management - supply switching absolute maximum ratings. parameter symbol ztx 1047a unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 5v peak pulse current i cm 20 a continuous collector current i c 4a base current i b 500 ma power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c ZTX1047A c b e e-line to92 compatible zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161-627 5105 (sales), (44)161-627 4963 (general enquiries) facsimile: (44)161-627 5467 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 87 modular avenue 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny11725 hing fong road, kwai fong major countries world-wide telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 ? zetex plc 1995 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service. transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 d=1(d.c) d=0.2 d=0.1 d=0.05 d=0.5 t1 tp d=t1 tp single pulse derating curve t -temperature (c) m a x p ower d i ssi p ati on - (wa tt s) -40 0.50 0.25 1.0 0.75 0 40 80 120 200 16 0 a mbi e nt tempe ratu re spice parameters *zetex ZTX1047A spice model last revision 20/01/95 * .model ZTX1047A npn is=9.73e-13 nf=1.0 bf=550 ikf=8.0 vaf=120 + ise=2.6e-13 ne=1.38 nr=1.0 br=400 ikr=5 var=15 + isc=8e-13 nc=1.4 rb=0.1 re=0.017 rc=0.010 + cjc=195.4e-12 cje=540.4e-12 mjc=0.257 mje=0.359 + vjc=0.390 vje=0.753 tf=450e-12 tr=1.2e-9 * ? 1995 zetex plc the copyright in this model and the design embodied belong to zetex plc (?zetex?). it is supplied free of charge by zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. all other rights are reserved. the model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by zetex plc, its distributors or agents. ZTX1047A
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